GCOE CEDI Osaka Univ.

GCOE CEDI Osaka Univ. Center for Electronic Devices Innovation

Osaka University Global Center of Excellence Program Center for Electronic Devices Innovation

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Postdoctoral research positions at
the Center of Excellence (COE) program of
"Center for Electronic Devices Innovation"

No Recruitment Now


For future reference...(Guidelines for Recruitment from September 2007 to January 2008)
Outline:
The purpose of the Fellowship is to provide opportunities for young postdoctoral researchers to conduct
R&D in the research units in Osaka University under the Global COE program, "Center for Electronic
Devices Innovation" supported by Ministry of Education, Culture, Sports Science and Technology of Japan.
Research fields:
  1. Power electronics for power system application, application study on next generation power devices
  2. Semiconductor laser (material development, fabrication development, design)
  3. Organic photovoltaic device (conducting polymer, fullerene, organic semiconductor, etc)
  4. Terahertz application, optical system development
  5. Fast and highly-functional bio-imaging system
  6. Fabrication, characterization and simulation of SQUID devices
  7. Plasma device, plasma photonics
  8. Nanotechnology (carbon nanotube, sensor, synthesis, characterization)
  • Rank:Part-time (Nontenured)Fellowships are renewed every year under screening of the Global COE administrative committee, and
    successful candidates will be awarded the Fellowships until March 31, 2012.
  • Work area:Osaka, Japan
  • Number of positions:A few
  • Qualifications:Candidates must hold a doctoral degree at the start of the fellowship.
  • Treatment :Salary, insurance and other allowances: As per the University norms
  • Deadline for applications:January 31, 2008
  • Starting date:The position will start as soon as possible after the selection.
Selection process:
  1. Screening conducted by the Global COE administrative committee
  2. We might ask candidates to present their studies at the 1st Global COE International Symposium
    "Electronic Devices Innovation" (EDIS2008)
Application materials:
  1. Curriculum vitae
  2. Summary of past studies and research plan
  3. List of achievements
  4. Offprints or photocopies of the three major papers
  5. Names, affiliations, and e-mail address of two academic referees who can evaluate the achievements
  6. Contact information (address, affiliations, phone, fax, and e-mail)
Submission and contact information:
The above materials are prepared as the application, and send the PDF file(s) to
the Global COE office by e-mail.

Global COE Office
Division of Electrical, Electronic and Information Engineering,
Graduate School of Engineering, Osaka University
2-1 Yamada-oka, Suita, Osaka 565-0871, JAPAN
E-mail: office@gcoe.eei.eng.osaka-u.ac.jp

Detailed Description of Research Fields
  1. Power Electronics for power system application, application study on next generation power devices
    -power device, power electronics, electrical power engineering
  2. Semiconductor laser
    -material development, fabrication development, design
  3. Organic photovoltaic device
    -conducting polymer, fullerene, organic semiconductor, organic solar cell, organic photovoltaic cell,
    organic device
  4. Terahertz application, optical system development
    -terahertz sensing, terahertz imaging
  5. Fast and highly-functional bio-imaging system
    -A postdoctoral position is available in fast and highly-functional bio-imaging system.
    Applicants are expected to have a research experience in designing imaging devices and to have knowledge
    of information processing in biological system, preferably neuronal system
    -imaging device, analog circuit design, bio-imaging, neurophysiology
  6. Fabrication, characterization and simulation of SQUID devices
    -To be able to fabricate SQUID devices (photolithography and ion milling etching process)
    and evaluate SQUID device electrical properties (magnetometer and gradiometer) and device simulations for SQUID device characterizations.
    -high-transition-temperature superconducting thin-film, Josephson junction, SQUID, grain-boundary
  7. Plasma device, plasma photonics
    -X-ray generation, terahertz wave generation, plasma device for optical control, plasma device for control of
    particles
  8. Nanotechnology
    -carbon nanotube, sensor, synthesis, characterization