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大阪大学グローバルCOEプログラム Center for Electronic Devices Innovation

大阪大学グローバルCOEプログラム 次世代電子デバイス教育研究開発拠点

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森 伸也[工学研究科(電気電子情報工学専攻)･准教授]
  1. 森伸也, 三成英樹、“次世代MOS型デバイスの量子輸送シミュレーション”応用物理 Vol. 78, No. 6, pp. 540-54 (2009).
  2. G. V. Mil'nikov, N. Mori, and Y. Kamakura, “R-matrix method for quantum transport simulations in discrete systems”, Physical Review B Vol. 79, pp. 235337 (1-5) (2009).
  3. S. Uno, D. Yong, and N. Mori, “Sum rules and universality in electron-modulated acoustic phonon interaction in a free-standing semiconductor plate”, Physical Review B Vol. 79, pp. 235328 (1-7) (2009).
  4. T. Kitayama, H. Minari, and N. Mori, “Full-band and atomistic study of electron-phonon interaction in graphene nanoribbons”, Journal of Physics: Conference Series Vol. 193, p. 012112 (2009).
  5. N. Mori, H. Minari, S. Uno, H. Mizuta, and N. Koshida, “Quasi-ballistic electron transport through silicon nanocrystals”, Journal of Physics: Conference Series Vol. 193, p. 012008 (2009).
  6. D. Fowler, D. P. A. Hardwick, A. Patane, M. T. Greenaway, A. G. Balanov, T. M. Fromhold, L.Eaves, M. Henini, N. Kozlova, J. Freudenberger, and N. Mori, “Magnetic-field-induced miniband conduction in semiconductor superlattices,” Physical Review B, Vol. 76, pp. 245303 (1-6) (2007).
  7. G. Mil'nikov, N. Mori, Y. Kamakura, and T. Ezaki, “Dopant-induced intrinsic bistability in a biased nanowire,” Physical Review Letters Vol. 102, No. 3, pp. 36801 (1-4) (2009).
  8. G. Mil'nikov, N. Mori, Y. Kamakura, and T. Ezaki, “R-matrix theory of quantum transport and recursive propagation method for device simulations,” Journal of Applied Physics Vol. 104, pp. 044506(1-14) (2008).
  9. G. Mil'nikov, N. Mori, Y. Kamakura, and T. Ezaki, “Solution of the Poisson equation with coulomb singularities,” Japanese Journal of Applied Physics Vol. 47, No. 10, pp. 7765-7770 (2008).
  10. G. V. Mil'nikov, N. Mori, Y. Kamakura, and T. Ezaki, “Implementation of the Bloch operator method for solving the Poisson equation,” Japanese Journal of Applied Physics, Vol. 46, pp. 5734-5737 (2007).
  11. G.V. Mil'nikov, N. Mori, Y. Kamakura, and T. Ezaki, “R-matrix theory of quantum transport in nanoscale electronic devices,” Applied Physics Express Vol. 1, No. 6, pp. 063001 (1-3)(2008).
  12. H. Furuse, N. Mori, H. Kubo, H. Momose, and M. Kondow, “Measurement of the temperature dependence of midinfrared optical absorption,” Physical Review B Vol. 75, p. 205101 (2007).
  13. H. Furuse, N. Mori, H. Kubo, H. Momose, and M. Kondow, “Phonon scattering of hot electrons in intense mid-infrared laser fields,” Physica Status Solidi (c) Vol. 5, p. 286 (2008).
  14. H. Furuse, N. Mori, H. Kubo, H. Momose, and M. Kondow, “Transmission study of germanium using free-electron,” Journal of Materials Science: Materials in Electronics Vol. 18, p. S81 (2007).
  15. H. Minari and N. Mori, "Atomistic modeling of hole transport in ultra-thin body SOI pMOSFETs," Journal of Computational Electronics, online doi:10.1007/s10825-007-0161-7.
  16. H. Minari and N. Mori, “Crystalline orientation effects on ballistic hole current in ultrathin DG SOI MOSFETs,” Simulation of Semiconductor Processes and Devices, Vol. 12, pp. 229-232 (2007).
  17. H. Minari and N. Mori, “Effects of strained layers on Zener tunneling in silicon nanostructures,”Japanese Journal of Applied Physics, Vol. 46, pp. 2076-2078 (2007).
  18. H. Minari and N. Mori, “Impact of strain on ballistic current in Si n-i-n structures,” Japanese Journal of Applied Physics Vol. 47, p. 2621 (2008).
  19. H. Minari and N. Mori, “Numerical simulation of hole transport in silicon nanostructures,” Journal of Computational Electronics, Vol. 6, pp. 223-225 (2007).
  20. N. Mori, G. Allison, A. Patane, and L. Eaves, “Resonant tunneling through a dilute nitride quantum well,” Physica Status Solidi (c), Vol. 5, pp. 198-202 (2007).
  21. N. Mori, H. Takeda, and H. Minari, "Effects of phonon scattering on electron transport in double-gate MOSFETs," Journal of Computational Electronics, online doi:10.1007/s10825-008-0199-1
  22. S. Uno and N. Mori, “Analytical description of intravalley acoustic phonon limited electron mobility in ultrathin Si plate incorporating phonon modulation due to plate interfaces,” J. Applied Physics ,Vol. 46, p. L923 (2007).
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