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近藤 正彦[工学研究科(電気電子情報工学専攻)･教授]
  1. M. Kondow, M. Uchiyama, M. Morifuji, S. D. Wu, H, Momose, S. Fukushima, A. Fukuyama, and T. Ikari, “Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors”, Applied Physics Express Vol. 2, pp. 041003-1- 041003-3 (2009).
  2. Masahiko Kondow, Takayuki Kawano, and Hideki Momose, “Selective Oxidation of AlGaAs for Photonic Crystal Laser”, Japanese Journal of Applied Physics Vol. 48 p.050202 (2009).
  3. Masayuki Uchiyama, Fumitaro Ishikawa, and Masahiko Kondow, “Effect of Plasma Conditions on the Growth of GaNAs by Plasma-Assisted Molecular-Beam Epitaxy”, Japanese Journal of Applied Physics Vol. 48, pp. 081102 (2009).
  4. R. Kudrawiec, P. Poloczek, J. Misiewicz, F. Ishikawa, A. Trampert and K. H. Ploog, “Temperature dependence of the optical transitions in Ga0.64In0.36N0.046As0.954 multiquantum wells of various widths studied by photoreflectance” ,Journal of Applied Physics Vol. 106, pp. 033507 (2009).
  5. Fumitaro Ishikawa, Shudong Wu, Masakazu Kato, Masayuki Uchiyama, Kotaro Higashi, and Masahiko Kondow, “Unintentional Source Incorporation in Plasma-Assisted Molecular Beam Epitaxy,” Japanese Journal of Applied Physics Vol. 48, pp. 125501 (2009).
  6. Masahiko Kondow, Fumitaro Ishikawa, Kazuyuki Umeno, Yuzo Furukawa, and Akihiro Wakahara, “Infrared Absorption Spectrum of InNP”, Applied Physics Express Vol. 3, pp. 011001 (2010).
  7. Shudong Wu, Yongge Cao, Stanko Tomic, and Fumitaro Ishikawa, “The optical gain and radiative current density of GaInNAs/GaAs/AlGaAs separate confinement heterostructure quantum well lasers”, Journal of Applied Physics Vol. 107, pp. 013107 (2010).
  8. H. Furuse, N. Mori, H. Kubo, H. Momose, and M. Kondow, “Measurement of the temperature dependence of midinfrared optical absorption spectra of germanium in intense laser fields,” Physical Review B, Vol. 75, pp. 205101(1-5) (2007).
  9. H. Furuse, N. Mori, H. Kubo, H. Momose, and M. Kondow, “Phonon scattering of hot electrons in intense mid-infrared laser fields,” Physica Status Solidi (c), Vol. 5, pp. 286-289 (2007).
  10. H. Furuse, N. Mori, H. Kubo, H. Momose, and M. Kondow, “Transmission study of germanium using free-electron laser,” Journal of Materials Science: Materials in Electronics, Vol. 18, pp. S81-S85 (2007).
  11. S. D. Wu, M. Kato, M. Uchiyama, K. Higashi, F. Ishikawa, and M. Kondow, “Effect of the unintentionalincorporation of Al during the molecular beam epitaxial growth of GaInNAs quantum well,” Physica Status Solidi (c) Vol. 5, pp. 2736-2739 (2008).
  12. S. D. Wu, M. Kato, M. Uchiyama, K. Higashi, F. Ishikawa, and M. Kondow, “Nitrogen gas flow driven unintentional incorporation of Al during the growth of dilute nitride semiconductor by plasma-assisted molecular beam epitaxy,”Applied Physics Express, Vol. 1, pp. 035004-1-035004-3 (2008).
  13. Shin-Ichi Fukushima, Kentaro Sakai1, Hirosumi Yokoyama, Atsuhiko Fukuyama, Masashi Ozeki, Masahiko Kondow, And Tetsuo Ikari, “Detection of Photogenerated Carrier Leakage from GaInNAs/GaAs Single Quantum Well by Piezoelectric Photothermal Spectroscopy,” Japanese Journal of Applied Physics Vol.4, pp. pp. 7060-7064 (2008).
  14. T. Ikari, S. Fukushima, Y. Ohta, A. Fukuyama, S. D. Wu, F. Ishikawa, and M. Kondow, “Experimental study of hydrostatic and shear deformation potential in Ga1-yInyNxAs1-x alloysusing a piezoelectric photothermal spectroscopy,” Physical Review B, Vol. 77, pp. 125311-1-125311-7 (2008).
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