Program

December 17th (Sciense Hall)

10:00-10:05

Opening   Toshifumi Ise (Osaka University)

10:05-10:25

"WB devices – A key Technology Milestone towards Ultimate Efficient and Compact Power Conversion Systems"
Leo Lorenz (President, European Center for Power Electronics(ECPE), Germany)

10:25-10:45

"Future Role of Power Devices: From "Si or WBG" to "Si and WBG""
Ichiro Omura (Kyushu Institute of Technology, Japan)

10:45-11:05

"Recent progress of SiC power devices"
Masayuki Imaizumi (Mitsubishi Electric Co., Japan)

11:05-11:25

"Current Status of SiC Power Device Development in AIST"
Noriyuki Iwamuro (National Institute of Advanced Industrial Science and　Technology (AIST), Japan)

11:25-11:35

Break

11:35-11:55

"Prospects of SiC Power Devices"
Jose Millan (National Microelectronics Centre (CNM-CSIC), Spain)

11:55-12:15

"State-of-the-art GaN Power Switching Devices"
Yoshiharu Anda (Panasonic Co., Japan)

12:15-12:35

"Toward Integrated GaN Power Electronics"
Kevin Chen (The Hong Kong University of Science Technology, China)

12:35-12:55

"Normally-off GaN Transistors and Diodes for Power Applications"
Oliver Hilt (Ferdinand-Braun-Institute Berlin, Germany)

12:55-14:15

Lunch Break

Discussion Session

 

14:15-15:25

Chairman: Leo Lorenz (President, European Center for Power Electronics(ECPE), Germany)

15:25-15:30

Closing   Toshifumi Ise (Osaka University)