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[1] "Unintentional source incorporation in plasma-assisted molecular beam epitaxy", F. Ishikawa, S.D. Wu, M. Kato, M. Uchiyama, K. Higashi and M. Kondow, Jpn. J. Appl. Phys., 48 (2009) 125501.φdωabxbxaxoxo|,,φ0 , 0 , 0a, 0 , 0b,B,0θBaBbSφdωabxbxaxoxo|,,φ0 , 0 , 0a, 0 , 0b,B,0θBφdωabxbxaxoxo|,,φ0 , 0 , 0a, 0 , 0b,B,0θBaBbSaBbSφ θBθSφ φ θ |xo| φ θBθSφ θBθSφ φ θ |xo| φ θ |xo| φ θ |xo| 1. Cells and substrate configurations of the MBE system.Vectors, angles, and a solid angle described in the text are defined here. (a) An overview and (b) the detail around Al cell2. Collision rate R calculated using eq. (6). (a) φdependence at |xo| =5 cm and θ=θB,(b)|xo| andθ dependence at φ=0°and (c) its Cartesian plot; lighter regions show higher values of the function.3. Calculated Al flux impinging on the substrate.Al2(c)θSθBAl3nAlPAl PNN2N2AlAlCOAICOFcmcmθθθθθθθθθθθθθθθθθθθθθθ39

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